Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1994-06-02
1996-05-07
Nelms, David C.
Static information storage and retrieval
Magnetic bubbles
Guide structure
36518503, 36523008, 36518511, 36518521, 36518522, G11C 1156, G11C 1134
Patent
active
055153178
ABSTRACT:
A memory system contains memory cells for storing multiple threshold levels to represent storage of "n" bits of data. The memory system includes an address buffer for generating a plurality of physical addresses such that each physical address uniquely identifies a memory location for "j" memory cells. In order to address a portion of the "n" bits identified by a single physical address, the address buffer generates a multi-level cell (MLC) address. The memory system also contains a switch control for permitting selection a multi-level cell (MLC) mode and a standard cell mode. A select circuit permits reading a single bit per cell when the memory operates in the standard cell mode, and permits reading multiple bits of data per memory cell when the memory operates in the multi-level cell mode. The addressing scheme of the present invention maintains address coherency by exhibiting a n:1 correspondence between memory locations and the physical addresses when operating in the MLC mode, and by exhibiting a 1:1 correspondence between memory locations and the physical addresses when operating in the standard cell mode.
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Robinson Kurt B.
Wells Steven E.
Hoang Huan
Intel Corporation
Nelms David C.
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