Static information storage and retrieval – Addressing – Sync/clocking
Patent
1999-03-24
2000-01-18
Hoang, Huan
Static information storage and retrieval
Addressing
Sync/clocking
364194, G11C 800
Patent
active
060162848
ABSTRACT:
An address transition detector (ATD) for a memory device detects a change in an address signal and in response, produces a timing signal. The timing signal is used to align the timing of operation of a memory cell and a sense amp with the timing of the change in the address signal. The ATD includes a detection circuit for detecting a change in the address signal and a transistor having its gate connected to an output of the detection circuit, its source connected to ground and its drain connected to a first input terminal of a logic gate. An output of the logic gate is connected to an inverter. The output of the inverter is connected to a node between the transistor and the first input terminal of the logic gate. The output of the logic gate is also connected to a pair of series connected delay circuits. The output of the second delay circuit is input to a second input terminal of the logic gate. The first delay circuit delays the rising edge of the signal output from the logic gate and the second delay circuit delays the falling edge of the signal output from the logic gate.
REFERENCES:
patent: 5706246 (1998-01-01), Choi et al.
patent: 5815464 (1998-09-01), Golla et al.
patent: 5875152 (1999-02-01), Liu et al.
Itagaki Toshihiro
Yoshikawa Sadao
Hoang Huan
Sanyo Electric Company Ltd.
LandOfFree
Address transition detector for memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Address transition detector for memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Address transition detector for memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-567420