Address strobe recognition in a memory device

Static information storage and retrieval – Addressing – Sync/clocking

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36523008, 365239, G11C 800

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active

058319310

ABSTRACT:
An integrated memory circuit is described which can be operated in a burst access mode. The memory circuit includes an address counter which changes column addresses in one of a number of predetermined patterns. The memory includes generator circuit for generating an internal control signal based upon external column address signals. The generator circuit detects the first active transition of the column address signals and the first inactive transition of the column address signals.

REFERENCES:
patent: 4344156 (1982-08-01), Eaton et al.
patent: 4484308 (1984-11-01), Lewandowski et al.
patent: 4510603 (1985-04-01), Catiller
patent: 4513389 (1985-04-01), Devchoudhury
patent: 4562555 (1985-12-01), Ouchi et al.
patent: 4567579 (1986-01-01), Patel et al.
patent: 4575825 (1986-03-01), Ozaki et al.
patent: 4603403 (1986-07-01), Toda
patent: 4618947 (1986-10-01), Tran et al.
patent: 4636986 (1987-01-01), Pinkham
patent: 4649522 (1987-03-01), Kirsch
patent: 4685089 (1987-08-01), Patel et al.
patent: 4707811 (1987-11-01), Takemae et al.
patent: 4750839 (1988-06-01), Wang et al.
patent: 4788667 (1988-11-01), Nakano
patent: 4799199 (1989-01-01), Scales et al.
patent: 4870622 (1989-09-01), Aria et al.
patent: 4875192 (1989-10-01), Matsumoto
patent: 4926314 (1990-05-01), Dhuey
patent: 4984217 (1991-01-01), Sato
patent: 5058066 (1991-10-01), Yu
patent: 5083296 (1992-01-01), Hara et al.
patent: 5126975 (1992-06-01), Handy et al.
patent: 5210723 (1993-05-01), Bates et al.
patent: 5237689 (1993-08-01), Behnke
patent: 5253357 (1993-10-01), Allen et al.
patent: 5267200 (1993-11-01), Tobita
patent: 5268865 (1993-12-01), Takasugi
patent: 5280594 (1994-01-01), Young et al.
patent: 5301278 (1994-04-01), Bowater et al.
patent: 5305284 (1994-04-01), Iwase
patent: 5319759 (1994-06-01), Chan
patent: 5323352 (1994-06-01), Miyata et al.
patent: 5325330 (1994-06-01), Morgan
patent: 5325502 (1994-06-01), McLaury
patent: 5333305 (1994-07-01), Neufeld
patent: 5339276 (1994-08-01), Takasugi
patent: 5349566 (1994-09-01), Merritt et al.
patent: 5357469 (1994-10-01), Sommer et al.
patent: 5373227 (1994-12-01), Keeth
patent: 5379261 (1995-01-01), Jones, Jr.
patent: 5386385 (1995-01-01), Stephens, Jr.
patent: 5392239 (1995-02-01), Margulis et al.
patent: 5394535 (1995-02-01), Ohuchi
patent: 5400292 (1995-03-01), Fukiage et al.
patent: 5410670 (1995-04-01), Hansen et al.
patent: 5436869 (1995-07-01), Yoshida
patent: 5449941 (1995-09-01), Yamazaki et al.
patent: 5452261 (1995-09-01), Chung et al.
patent: 5454107 (1995-09-01), Lehman et al.
patent: 5457659 (1995-10-01), Schaefer
patent: 5483498 (1996-01-01), Hotta
patent: 5485428 (1996-01-01), Lin
patent: 5487049 (1996-01-01), Hang
patent: 5513148 (1996-04-01), Zager
patent: 5522064 (1996-05-01), Aldereguia et al.
patent: 5526320 (1996-06-01), Zagar et al.
patent: 5598376 (1997-01-01), Merritt et al.
"DRAM 1 Meg X 4 DRAM 5VEDO Page Mode",, 1995 DRAM Data Book,, pp. 1-1 thru 1-30,, (Micron Technology, I).
"Rossini, Pentium, PCI-ISA, Chip Set", Symphony Laboratories,, entire book.
"4DRAM 1991", Toshiba America Electronic Components, Inc., pp. A-137-A-159.
"Application Specific DRAM", Toshiba America Electronic Components, Inc., C178, C-260, C 218, (1994).
"Burst DRAM Function & Pinout", Oki Electric Ind., Co., Ltd., 2nd Presentation, Item #619, (Sep. 1994).
"Hyper page mode DRAM", 8029 Electronic Engineering 66, No. 813, Woolwich, London GB, pp. 47-48, (Sep. 1994).
"Hyper Page Mode DRAM", Electronic Engineering, vol. 66, No. 813, pp. 47-48, (Sep. 1994).
"Hyper Page Mode DRAM", Electronic Engineering, 66, No. 813,, Woolwich, London, GB, pp. 47-48, (Sep. 1994).
"Hyper Page Mode DRAM", Electronic Engineering 8029, No., 813, Woolwich, London, GB, pp. 47-48, (Sep. 1994).
"Hyper Page Mode DRAM", Electronic Engineering, 66, No. 813, pp. 47-48, (Sep. 1994).
"Micron Semiconductor, Inc.", 1994 DRAM Data Book, entire book,.
"Mosel-Vitelic V53C8257H DRAM Specification Shhet, 20 pages, Jul. 2, 1994".
"Pipelined Burst DRAM", Toshiba, JEDEC JC 42.3 Hawaii, (Dec. 1994).
"Samsung Synchronous DRAM", Revision 1, Samsung Electronics, 1-16, (Mar., 1993).
"Samsung Synchronous DRAM", Samsung Electronics, pp. 1-16, (Mar. 1993).
"Synchronous DRAM 2 MEG cx 8 SDRAM", Micron Semiconductor, Inc., pp. 2-43 through 2-8.
Bursky, D., "Novel I/O Options and Innovative Architectures Let DRAMs Achieve SRAM Performance; Fast DRAMS can be swapped for SRAM Caches", Electronic Design, vol. 41, No. 15, Cleveland, Ohio, pp. 55-67, (Jul. 22, 1993).
Gowni, S.P., et al., "A 9NS, 32K X 9, BICMOS TTL Synchronous Cache RAM With Burst Mode Access", IEEE, Custom Integrated Circuits Conference, pp. 781-786, (Mar. 3, 1992).
Gowni, et al., "Synchronous Cache RAM with Burst ;Mode Access", IEEE 1992 Custom Integrated Circuits Conference, Boston USA, pp. 781-784, (May 1992) .

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