Additive metalization using photosensitive polymer as RIE mask a

Details Additive metalization using photosensitive polymer as RIE mask a Additive metalization using photosensitive polymer as RIE mask a

1996-04-01

1998-10-27

Chapman, Mark

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438703, 438712, 438725, 438763, 438778, 438780, 430313, 430318, H01L 21465, G03C 500

Patent

active

058277803

ABSTRACT:
The surface of an integrated circuit, which uses reactive ion etching to pattern metal interconnection, is protected with two insulating layers on the surface. The first layer is a conventional silicon dioxide. The second layer is a photosensitive polymer which is the same as the material used for subsequent metalization of interconnection using the reactive ion etching technique. When the second layer is used, the reactive ion etching cannot attack the silicon dioxide. A trench can be cut through the two insulating layers, using a window in the photosensitive polymer as a mask, to serve as a via hole for metal to contact the substrate

REFERENCES:
patent: 4758306 (1988-07-01), Cronin et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5246885 (1993-09-01), Braren et al.

Affiliated with

Also associated with

Rating

Additive metalization using photosensitive polymer as RIE mask a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Additive metalization using photosensitive polymer as RIE mask a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Additive metalization using photosensitive polymer as RIE mask a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1613613