Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-11-21
2006-11-21
Owens, Douglas W. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S202000, C257S207000, C257S208000, C257SE21590
Reexamination Certificate
active
07138716
ABSTRACT:
A semiconductor device and method of adding metal layers in a semiconductor device with signal reallocation are disclosed. The device has a first layer with a plurality of signal wires. A second layer adjacent to the first layer is also included that has a plurality of signal wires. The signal wires in the first and second layers are substantially parallel with each other. The signal wires are distributed between the first and second layer in a manner that reduces the wire capacitance and/or resistance thereby permitting higher frequency operation and lower power consumption in the device.
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Anshumali Kumar
Burton Edward A.
Fleshner & Kim LLP
Intel Corporation
Nguyen Dao H.
Owens Douglas W.
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