Addition of metal layers with signal reallocation to a...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S202000, C257S207000, C257S208000, C257SE21590

Reexamination Certificate

active

07138716

ABSTRACT:
A semiconductor device and method of adding metal layers in a semiconductor device with signal reallocation are disclosed. The device has a first layer with a plurality of signal wires. A second layer adjacent to the first layer is also included that has a plurality of signal wires. The signal wires in the first and second layers are substantially parallel with each other. The signal wires are distributed between the first and second layer in a manner that reduces the wire capacitance and/or resistance thereby permitting higher frequency operation and lower power consumption in the device.

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