Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-07-14
2010-02-02
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185280
Reexamination Certificate
active
07656710
ABSTRACT:
Adaptive write operations for non-volatile memories select programming parameters according to monitored programming performance of individual memory cells. In one embodiment of the invention, programming voltage for a memory cell increases by an amount that depends on the time required to reach a predetermined voltage and then a jump in the programming voltage is added to the programming voltage required to reach the next predetermined voltage. The adaptive programming method is applied to the gate voltage of memory cells; alternatively, it can be applied to the drain voltage of memory cells along a common word line. A circuit combines the function of a program switch and drain voltage regulator, allowing independent control of drain voltage of selected memory cells for parallel and adaptive programming. Verify and adaptive read operations use variable word line voltages to provide optimal biasing of memory and reference cells during sensing.
REFERENCES:
patent: 5043940 (1991-08-01), Harari
patent: 5095344 (1992-03-01), Harari
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5293560 (1994-03-01), Harari
patent: 5386388 (1995-01-01), Atwood et al.
patent: 5440505 (1995-08-01), Fazio et al.
patent: 5508958 (1996-04-01), Fazio et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5583812 (1996-12-01), Harari
patent: 5602789 (1997-02-01), Endoh et al.
patent: 5642312 (1997-06-01), Harari
patent: 5677869 (1997-10-01), Fazio et al.
patent: 5694357 (1997-12-01), Mori
patent: 5701266 (1997-12-01), Fazio et al.
patent: 5729489 (1998-03-01), Fazio et al.
patent: 5757699 (1998-05-01), Takeshima et al.
patent: 5768191 (1998-06-01), Choi et al.
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5796652 (1998-08-01), Takeshima et al.
patent: 5801989 (1998-09-01), Lee et al.
patent: 5812457 (1998-09-01), Arase
patent: 5828616 (1998-10-01), Bauer et al.
patent: 5892710 (1999-04-01), Fazio et al.
patent: 5892714 (1999-04-01), Choi
patent: 5909390 (1999-06-01), Harari
patent: 5912838 (1999-06-01), Chevallier
patent: 5923588 (1999-07-01), Iwahashi
patent: 5926409 (1999-07-01), Engh et al.
patent: 5949714 (1999-09-01), Hemink et al.
patent: 6011715 (2000-01-01), Pasotti et al.
patent: 6014327 (2000-01-01), Banks
patent: 6014330 (2000-01-01), Endoh et al.
patent: 6038166 (2000-03-01), Wong
patent: 6038174 (2000-03-01), Khan et al.
patent: 6040993 (2000-03-01), Chen et al.
patent: 6046934 (2000-04-01), Lin
patent: 6058060 (2000-05-01), Wong
patent: 6091631 (2000-07-01), Kucera et al.
patent: 6094368 (2000-07-01), Ching
patent: 6097639 (2000-08-01), Choi et al.
patent: 6134141 (2000-10-01), Wong
patent: 6134145 (2000-10-01), Wong
patent: 6134148 (2000-10-01), Kawahara et al.
patent: 6149316 (2000-11-01), Harari et al.
patent: 6175937 (2001-01-01), Norman et al.
patent: 6219276 (2001-04-01), Parker
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6259627 (2001-07-01), Wong
patent: 6278633 (2001-08-01), Wong et al.
patent: 6285598 (2001-09-01), Khan et al.
patent: 6292396 (2001-09-01), Tailliet
patent: 6314025 (2001-11-01), Wong
patent: 6324094 (2001-11-01), Chevallier
patent: 6327183 (2001-12-01), Pawletko et al.
patent: 6330185 (2001-12-01), Wong et al.
patent: 6343033 (2002-01-01), Parker
patent: 6392931 (2002-05-01), Pasotti et al.
patent: 6462986 (2002-10-01), Khan
patent: 6466481 (2002-10-01), Pasotti et al.
patent: 6490204 (2002-12-01), Bloom et al.
patent: 6493265 (2002-12-01), Satoh et al.
patent: 6496418 (2002-12-01), Kawahara et al.
patent: 6525961 (2003-02-01), Rolandi et al.
patent: 6538923 (2003-03-01), Parker
patent: 6542403 (2003-04-01), Parker
patent: 6556475 (2003-04-01), Yamazaki et al.
patent: 6606267 (2003-08-01), Wong
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6661707 (2003-12-01), Choi et al.
patent: 6707719 (2004-03-01), Shibata et al.
patent: 6714448 (2004-03-01), Manea
patent: 6724656 (2004-04-01), Banks
patent: 6738289 (2004-05-01), Gongwer et al.
patent: 6747892 (2004-06-01), Khalid
patent: 6747893 (2004-06-01), Uribe et al.
patent: 6751129 (2004-06-01), Gongwer
patent: 6788579 (2004-09-01), Gregori et al.
patent: 6807097 (2004-10-01), Takano et al.
patent: 6822909 (2004-11-01), Hamilton et al.
patent: 6829172 (2004-12-01), Bloom et al.
patent: 6831858 (2004-12-01), Hirano et al.
patent: 6856551 (2005-02-01), Mokhlesi et al.
patent: 6870763 (2005-03-01), Banks
patent: 6882567 (2005-04-01), Wong
patent: 6888758 (2005-05-01), Hemink et al.
patent: 6894926 (2005-05-01), Guterman et al.
patent: 6906951 (2005-06-01), Wong
patent: 7020026 (2006-03-01), Guterman et al.
patent: 7173859 (2007-02-01), Hemink
patent: 7227783 (2007-06-01), Li
patent: 7230852 (2007-06-01), Mitani et al.
patent: 2002/0191444 (2002-12-01), Gregori et al.
patent: 11-134879 (1999-05-01), None
Giovanni Campardo, et al., “40-mm2 3-V-Only 50-MHz 64-Mb 2-v/Cell CHE NOR Flash Memory”, IEEE Journal of Solid-State Circuits, Nov. 2000, vol. 35, No. 11.
Graham Kretelia
Millers David
Zarabian Amir
LandOfFree
Adaptive operations for nonvolatile memories does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Adaptive operations for nonvolatile memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adaptive operations for nonvolatile memories will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4185819