Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Reexamination Certificate
2005-03-29
2005-03-29
Lam, Tuan T. (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
C330S296000
Reexamination Certificate
active
06873202
ABSTRACT:
A MOSFET can operate as a resistor by operating in the linear or ohmic region of the drain V-I characteristics. This region can be obtained by floating the gate of the MOSFET, when the dc current and the voltage drop are given. Multiple resistors can be duplicated (or mirrored) by sharing the same source and floating gate. The floating gate voltage can be simulated using a closed loop equivalent circuit. Alternatively, the gate voltage can also be derived from the given drain-to-source voltage and the given current in a feedback loop. With this adaptive MOSFET resistor, the minimum supply voltage can be as low as the sum of the BJT threshold and the complementary BJT saturation voltage, e.g. VCC≧VBE+Vsat (e.g. 0.8+0.15<1.0V). The threshold voltage Vt should be less than VBE.
REFERENCES:
patent: 4492883 (1985-01-01), Janutka
patent: 4553108 (1985-11-01), Young
patent: 5014102 (1991-05-01), Adler
patent: 5712588 (1998-01-01), Choi et al.
H. C. Lin Patent Agent
Lam Tuan T.
Maryland Semiconductor Inc.
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