Adaptive erase and soft programming for memory

Details Adaptive erase and soft programming for memory Adaptive erase and soft programming for memory

2008-12-11

2010-11-23

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185220, C365S185240, C365S185290

Reexamination Certificate

active

07839690

ABSTRACT:
An erase sequence of a non-volatile storage device includes an erase operation followed by a soft programming operation. The erase operation applies one or more erase pulses to the storage elements, e.g., via a substrate, until an erase verify level is satisfied. The number of erase pulses is tracked and recorded as an indicia of the number of programming-erase cycles which the storage device has experienced. The soft programming operation applies soft programming pulses to the storage elements until a soft programming verify level is satisfied. Based on the number of erase pulses, the soft programming operation time is shortened by skipping verify operations for a specific number of initial soft programming pulses which is a function of the number of erase pulses. Also, a characteristic of the soft programming operation can be optimized, such as starting amplitude, step size or pulse duration.

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