Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-03-08
2011-03-08
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185200
Reexamination Certificate
active
07903468
ABSTRACT:
Each of a plurality of flash memory cells is programmed to a respective one of L≧2 threshold voltage states within a threshold voltage window. Values of parameters of threshold voltage functions are adjusted in accordance with comparisons of the threshold voltages of some or all of the cells to two or more of m≧2 threshold voltage intervals within the threshold voltage window. Reference voltages for reading the cells are selected based on the values. Alternatively, the m threshold voltage intervals span the threshold voltage window, and respective threshold voltage states are assigned to the cells based on numbers of cells whose threshold voltages are in the intervals, without re-reading the cells.
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Alrod Idan
Litsyn Simon
Sharon Eran
Friedman Mark M.
Le Vu A
Ramot At Telaviv University Ltd.
Yang Han
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