Adaptive correlation of pattern resist structures using...

Details Adaptive correlation of pattern resist structures using... Adaptive correlation of pattern resist structures using...

2004-08-02

2008-10-21

Geyer, Scott B. (Department: 2812)

Data processing: structural design, modeling, simulation, and em

Simulating electronic device or electrical system

C702S002000

Reexamination Certificate

active

07440881

ABSTRACT:
A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.

REFERENCES:
patent: 5991699 (1999-11-01), Kulkarni et al.
patent: 6606152 (2003-08-01), Littau et al.
patent: 6606727 (2003-08-01), Yang et al.
patent: 6931298 (2005-08-01), Chang
patent: 7031791 (2006-04-01), Chang

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