Adapted LED device with re-emitting semiconductor construction

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07902542

ABSTRACT:
An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.

REFERENCES:
patent: 5087949 (1992-02-01), Haitz
patent: 5252839 (1993-10-01), Fouquet
patent: 5625636 (1997-04-01), Bryan et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5851905 (1998-12-01), McIntosh et al.
patent: 5915193 (1999-06-01), Tong et al.
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 5998925 (1999-12-01), Shimizu et al.
patent: 6054719 (2000-04-01), Fusser et al.
patent: 6091083 (2000-07-01), Hata et al.
patent: 6292576 (2001-09-01), Brownlee
patent: 6303404 (2001-10-01), Moon et al.
patent: 6328456 (2001-12-01), Mize
patent: 6337536 (2002-01-01), Matsubara et al.
patent: 6429462 (2002-08-01), Shveykin
patent: 6473554 (2002-10-01), Pelka et al.
patent: 6476412 (2002-11-01), Kano
patent: 6504171 (2003-01-01), Grillot et al.
patent: 6555958 (2003-04-01), Srivastava et al.
patent: 6563133 (2003-05-01), Tong
patent: 6566688 (2003-05-01), Zhang et al.
patent: 6610598 (2003-08-01), Chen
patent: 6618420 (2003-09-01), Gen-Ei et al.
patent: 6649939 (2003-11-01), Wirth
patent: 6717362 (2004-04-01), Lee et al.
patent: 6720730 (2004-04-01), Salam
patent: 6734467 (2004-05-01), Schlereth et al.
patent: 6824660 (2004-11-01), Tomita
patent: 6849881 (2005-02-01), Harle et al.
patent: 6924512 (2005-08-01), Tsuda et al.
patent: 7009210 (2006-03-01), Sarathy et al.
patent: 7038245 (2006-05-01), Nitta et al.
patent: 7045375 (2006-05-01), Wu et al.
patent: 7135073 (2006-11-01), Heuken et al.
patent: 7266279 (2007-09-01), Yap et al.
patent: 7304425 (2007-12-01), Ouderkirk et al.
patent: 7700939 (2010-04-01), Miller et al.
patent: 7763903 (2010-07-01), Orita
patent: 2002/0030194 (2002-03-01), Camras et al.
patent: 2002/0041148 (2002-04-01), Cho et al.
patent: 2002/0134989 (2002-09-01), Yao et al.
patent: 2002/0139984 (2002-10-01), Sugawara et al.
patent: 2003/0006430 (2003-01-01), Shibata et al.
patent: 2003/0111667 (2003-06-01), Schubert
patent: 2003/0178626 (2003-09-01), Sugiyama et al.
patent: 2004/0072047 (2004-04-01), Markoski et al.
patent: 2004/0075102 (2004-04-01), Chen et al.
patent: 2005/0007793 (2005-01-01), Yoshida et al.
patent: 2005/0023545 (2005-02-01), Camras et al.
patent: 2005/0039788 (2005-02-01), Blieske et al.
patent: 2005/0082562 (2005-04-01), Ou et al.
patent: 2005/0110990 (2005-05-01), Koo et al.
patent: 2006/0050081 (2006-03-01), Kobayashi et al.
patent: 2006/0076883 (2006-04-01), Himaki et al.
patent: 2006/0091411 (2006-05-01), Ouderkirk et al.
patent: 2006/0091414 (2006-05-01), Ouderkirk et al.
patent: 2006/0091784 (2006-05-01), Conner et al.
patent: 2006/0092532 (2006-05-01), Ouderkirk et al.
patent: 2006/0094322 (2006-05-01), Ouderkirk et al.
patent: 2006/0094340 (2006-05-01), Ouderkirk et al.
patent: 2006/0124917 (2006-06-01), Miller et al.
patent: 2006/0124918 (2006-06-01), Miller et al.
patent: 2006/0210726 (2006-09-01), Jones et al.
patent: 2007/0008257 (2007-01-01), Seo et al.
patent: 2007/0018183 (2007-01-01), Denbaars et al.
patent: 2007/0108462 (2007-05-01), Park et al.
patent: 2007/0116423 (2007-05-01), Leatherdale et al.
patent: 2007/0221867 (2007-09-01), Beeson et al.
patent: 2007/0256453 (2007-11-01), Barnes et al.
patent: 2007/0257266 (2007-11-01), Leatherdale et al.
patent: 2007/0257267 (2007-11-01), Leatherdale et al.
patent: 2007/0257270 (2007-11-01), Lu et al.
patent: 2007/0257271 (2007-11-01), Ouderkirk et al.
patent: 2007/0258246 (2007-11-01), Leatherdale et al.
patent: 2007/0284565 (2007-12-01), Leatherdale et al.
patent: 2008/0006832 (2008-01-01), Haase
patent: 2009/0128737 (2009-05-01), Ouderkirk et al.
patent: 2009/0184624 (2009-07-01), Schmidt et al.
patent: 2009/0207628 (2009-08-01), Haase et al.
patent: 1445869 (2003-10-01), None
patent: 1705732 (2005-12-01), None
patent: 1 345 276 (2003-09-01), None
patent: 2004-072047 (2004-03-01), None
patent: 17-055481 (2005-03-01), None
patent: 10-2004-0089084 (2004-10-01), None
patent: WO 2005/038937 (2005-04-01), None
U.S. Appl. No. 11/761,078, filed Jun. 11, 2007, Titled “LED Device with Re-emitting Semiconductor Construction and Optical Element.”
U.S. Appl. No. 11/761,144, filed Jun. 11, 2007, Titled “LED Device with Re-emitting Semiconductor Construction and Converging Optical Element.”
U.S. Appl. No. 11/761,067, filed Jun. 11, 2007, Titled “LED Device with Re-emitting Semiconductor Construction and Converging Optical Element.”
Dalmasso et al., Injection Dependence of the Electroluminescence Spectra of Re-emitting semiconductor construction Free GaN-Based White Light Emitting Diodes.Phys. Stat. Sol. (a), vol. 192, No. 1, pp. 139-143 (2003).
Damilano et al., Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells,Japanese Journal of Applied Physics, vol. 40, pp. L918-L920 (2001).
Kroemer,Quantum Mechanics for Engineering, Materials Science and Applied PhysicsPrentice Hall, Englewood Cliffs, NJ, pp. 54-63, (1994).
Luo et al., Patterned three-color ZnCdASe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters,Applied Physics Letters, vol. 77, No. 26, pp. 4259-4261 (2000).
Murai et al., Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications,Japanese Journal of Applied Physics, vol. 43 No. 10A, p. L1275 (2004).
Tong et al.,Semiconductor Wafer Bonding, John Wiley & Sons, NY, pp. 49-101 (1999).
Tong et al.,Semiconductor Wafer Bonding, John Wiley & Sons, NY, pp. 223-232 (1999).
Yamada et al., Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well,Japanese Journal of Applied Physics. vol. 41 pp. L246-248 (2002).
Zory,Quantum Well Lasers, Academic Press, San Diego, CA, pp. 72-79 (1993).
International Search Report for PCT Application No. PCT/US2007/070533, 3 pages.
International Written Opinion for PCT Application No. PCT/US2007/070533, 4 pages.
U.S. Appl. No. 60/804,824, entitled “LED Device with Re-Emitting Semiconductor Construction and Optical Element”, filed on Jun. 14, 2006.
U.S. Appl. No. 60/804,824, entitled “LED Device with Re-Emitting Semiconductor Construction and Extractor”, filed on Jun. 12 ,2006.
U.S. Appl. No. 60/804,800, entitled “Adapted LED Device with Re-Emitting Semiconductor Construction”, filed on Jun. 14, 2006.
U.S. Appl. No. 60/804,544, entitled “LED Device with Re-Emitting Semiconductor Construction and Converging Optical Element”, filed on Jun. 12, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Adapted LED device with re-emitting semiconductor construction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Adapted LED device with re-emitting semiconductor construction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Adapted LED device with re-emitting semiconductor construction will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2656089

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.