Active semiconductor component with an optimized surface area

Details Active semiconductor component with an optimized surface area Active semiconductor component with an optimized surface area

2006-05-30

2006-05-30

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With metal contact alloyed to elemental semiconductor type...

In pn junction tunnel diode

C257S104000, C257S121000

Reexamination Certificate

active

07053404

ABSTRACT:
A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness thereof, said cylinder(s) having a cross-section with an undulated closed curve shape.

REFERENCES:
patent: 3069603 (1962-12-01), Hunter
patent: 3128530 (1964-04-01), Rouse et al.
patent: 3254275 (1966-05-01), Lob
patent: 3411054 (1968-11-01), Cullis
patent: 3925803 (1975-12-01), Kobayashi
patent: 3988764 (1976-10-01), Cline et al.
patent: 4032955 (1977-06-01), Anthony et al.
patent: WO 00/35018 (2002-06-01), None
French Search Report from corresponding French National Application No. 03/50987 filed Dec. 5, 2003.
French Search Report from related French National Application No. 03/50985 filed Dec. 5, 2003.
Zhong J.X. et al.,Electronic Structure of a Fractal Model of Porous Silicon, J. Non-Cryst. Solids (Netherlands), Dec. 1993, vol. 164-166, Pt. 2, pp. 969-972, XP002290027.

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