Active resonant circuit with resonant-frequency tunability

Wave transmission lines and networks – Negative resistance or reactance networks of the active type – Simulating specific type of reactance

Reexamination Certificate

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C333S213000

Reexamination Certificate

active

07843287

ABSTRACT:
The present invention is directed to provide a low-power-consumption wide-range RF signal processing unit having a small chip occupation area. A semiconductor integrated circuit has, on a semiconductor chip, a resonant circuit including a first capacitor having a capacitance which can be controlled by a first control signal of a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a capacitance which can be controlled by a second control signal of a second control terminal. The capacitance and the inductor form a parallel resonant circuit. At the time of changing parallel resonant frequency, the capacitances of the first and second capacitors are coordinately changed. The parallel resonant circuit is suitable for an active load which is connected to an output node of an amplifier.

REFERENCES:
patent: 6825722 (2004-11-01), Segawa
patent: 7149191 (2006-12-01), Johansson-Gardenfors et al.
J. Lee et al., “A 7-Band 3-8GHz Frequency Synthesizer with 1ns Band-Switching Time in 0.18μm CMOS Technology,” 2005 IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp. 204-205 and 593.
A. Abidi, “Noise in Active Resonators and the Available Dynamic Range,” IEEE Transactions on Circuits and Systems—I: Fundamental Theory and Applications, vol. 39, No. 4, Apr. 1992, pp. 296-299.
A. Thanachayanont, “Low Voltage Low Power CMOS Inductorless RF Bandpass Filter with High Image Rejection Capability,” IEEE, The 2002 45thMidwest Symposium on Circuits and Systems, vol. 3, pp. III-548 to III-551.
Y. Shin, “An Inductorless 900MHz RF Low-Noise Amplifier in 0.9 μm CMOS,” IEEE 1997 Custom Integrated Circuits Conference, pp. 513-516.

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