Active pixel sensor with shared readout structure

Details Active pixel sensor with shared readout structure Active pixel sensor with shared readout structure

1998-06-25

2000-03-28

Le, Que T.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250214R, 348308, H01J 4014

Patent

active

060434783

ABSTRACT:
An active pixel sensor with a shared readout structure controls the switching of its transistors in a time-divided manner in conjunction with the appropriate switching of the voltage of a variable voltage source, whereby two pixels in a sensor can share a common readout structure and a selecting transistor commonly used in conventional art is not required. The present invention comprises: a first photodiode and a first NMOS transistor, wherein the anode and cathode of the first photodiode are coupled to a ground and the source of the first NMOS transistor, respectively, and a first selecting signal is coupled to the gate of the first NMOS transistor; a second photodiode and a second NMOS transistor, wherein the anode and cathode of the second photodiode are coupled to the ground and the source of the second NMOS transistor, respectively, and a second selecting signal is coupled to the gate of the second NMOS transistor; and a third NMOS transistor and a fourth NMOS transistor, wherein the drains of the first and second NMOS transistors are coupled to the source of the third NMOS transistor and the gate of the fourth NMOS transistor, and a reset signal is coupled to the gate of the third NMOS transistor, and the drains of the third and fourth NMOS transistors are coupled to a variable voltage source.

REFERENCES:
patent: 5900623 (1999-05-01), Tsang et al.

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