Active pixel sensor with punch-through reset and cross-talk supp

Details Active pixel sensor with punch-through reset and cross-talk supp Active pixel sensor with punch-through reset and cross-talk supp

1997-02-27

1999-02-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257223, 257229, 257239, 257292, 257445, H01L 27148, H01L 29768

Patent

active

058723714

ABSTRACT:
In an active pixel sensor having a plurality of pixels, each of the pixels having a photodetector for accumulating charge from incident light, a transfer gate for removing charge from the photodetector, a floating diffusion that acts as a sense node to an amplifier input, and a drain the improvement comprising the provision of a reset mechanism for each pixel by application of a potential adjacent the floating diffusion such that the area between the floating diffusion and the drain becomes depleted.

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patent: 5404039 (1995-04-01), Watanabe
patent: 5416345 (1995-05-01), Matsunaga
patent: 5426317 (1995-06-01), Hirota
E. Fossum, "Active Pixel Sensors: Are CCD's Dinosaurs?", SPIE vol. 1900-08-8194-1133.
R.H. Nixon, S.E. Kemeny, C.O. Staller, and E.R. Fossum, "128.times.128 CMOS Photodiode-type Active Pixel Sensor with On-chip Timing, Control and Signal Chain Electronics." Proceedings of the SPIE vol. 2415, Charge-Coupled Devices and Solid-State Optical Sensors V, paper 34 (1995).
H.S. Philip Wong, "Technology and Device Scaling Considerations for CMOS Imagers." IEEE Solid State Circuits Technology Workshop on CMOS Imaging Technology, Feb. 7, 1996, San Francisco, CA.

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