Active pixel sensor integrated with a pinned photodiode

Details Active pixel sensor integrated with a pinned photodiode Active pixel sensor integrated with a pinned photodiode

1996-12-20

1999-05-18

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 73, 438 78, 257292, H01L31/101;31/105

Patent

active

059044934

ABSTRACT:
The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

REFERENCES:
patent: 5262871 (1993-11-01), Wilder et al.
patent: 5369039 (1994-11-01), Hynecek
Paul P.Lee, et al., "An Active Pixel Sensor Fabricated Using CMOS/CCD Process Technology" Published at IEEE Workshop on Charge Couple Device and Advanced Image Sensors, in Dana Point California, on Apr. 20, 1995 as a handout.

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