Active pixel sensor integrated with a pinned photodiode

Details Active pixel sensor integrated with a pinned photodiode Active pixel sensor integrated with a pinned photodiode

1998-11-05

2000-08-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257291, 257292, 257458, 257461, 438 66, H01L 31062, H01L 31113

Patent

active

061005517

ABSTRACT:
The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

REFERENCES:
patent: 5051797 (1991-09-01), Erhardt
patent: 5306931 (1994-04-01), Stevens
patent: 5625210 (1997-04-01), Lee et al.
patent: 5880495 (1999-03-01), Chen
patent: 5898168 (1999-04-01), Gowda et al.
patent: 5898196 (1999-04-01), Hook et al.
patent: 5903021 (1999-05-01), Lee et al.

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