Active pixel sensor cell that utilizes a parasitic transistor to

Details Active pixel sensor cell that utilizes a parasitic transistor to Active pixel sensor cell that utilizes a parasitic transistor to

1996-05-13

1998-01-20

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

H01L 27148, H01L 29768

Patent

active

057104468

ABSTRACT:
The amount of silicon real estate consumed by a photodiode-based active pixel sensor cell is reduced by utilizing a parasitic transistor to reset the voltage on the photodiode in lieu of the conventional use of a reset transistor. The parasitic transistor is formed by forming a doped region a distance apart from the well region of the photodiode, which defines a parasitic channel region therebetween, and a reset gate over the parasitic channel region.

REFERENCES:
patent: 4716466 (1987-12-01), Miida
patent: 4760558 (1988-07-01), Berger et al.
patent: 5053872 (1991-10-01), Matsunaga
patent: 5191398 (1993-03-01), Mutoh
Dickinson, A. et al, "A 256.times.256 CMOS Active Pixel Image Sensor with Motion Detection", TP 13.5, IEEE International Solid-State Circuits Conference (1995) pp. 226-227.

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