Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit
Patent
1996-03-01
1998-02-24
Ngo, Ngan V.
Radiant energy
Photocells; circuits and apparatus
Photocell controlled circuit
257290, 257291, 257292, 257461, 257465, H01L 31062, H01L 31113
Patent
active
057214255
ABSTRACT:
The accuracy of an active pixel sensor cell is increased by utilizing a reset diode in lieu of the reset transistor that is conventionally used to reset the voltage on the photodiode of the cell. The reset diode, which is largely unaffected by 1/f noise, consistently resets the photodiode to a substantially constant voltage as opposed to the reset transistor which varies the reset voltage on the photodiode across integration periods due to the effect of 1/f noise. In the present invention, the photodiode is formed by forming a well region of a second conductivity type in a substrate of a first conductivity type. The reset diode is then formed by forming a reset region of the first conductivity type in the well region.
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Fossum, E., Active-pixel sensors challenge CCSs, Technology Guide: Detector Handbook, Laser Focus World, Jun. 1993, pp. 83-87, Pasadena, CA.
Mendis, S. et al., Progress in CMOS Active Pixel Image Sensors, SPIE vol. 2172, (1994) Center for Space Microelectronics Tech., Jet Propulsion Laboratory, California Institute of Technology, pp. 19-29, paper presented at a Conference on Feb. 7-8, 1994 in San Jose, CA.
Kawashima, H. et al., A 1/4 Inch Format 250K Pixel Amplified MOS Image Sensor Using CMOS Process, 1993 IEEE, pp. 575-578, Tokyo, Japan, no month.
Dickinson, A. et al., A 256 .times.256 CMOS Active Pixel Image Sensor with Motion Detection, ISSCC95/Session 13/Image Sensors and Systems/Paper TP 13.5, 1995 IEEE International Solid-State Circuits Conf., Feb. 16, 1995, Pasadena, CA.
National Semiconductor Corporation
Ngo Ngan V.
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