Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1997-08-25
2000-02-22
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257290, 257291, 257257, 257258, 257236, 257369, H01L 31062
Patent
active
060269642
ABSTRACT:
The present invention is a active pixel sensor cell and method of making and using the same. The active pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a active pixel sensor cell circuit. Two active pixel sensor cell circuits, an NFET circuit and PFET circuit are created for use with a photodiode. The NFET circuit captures electron current. The PFET circuit captures hole current. The sum of the currents is approximately double that of conventional active pixel sensor circuits using similarly sized photodiode regions.
REFERENCES:
patent: 5587596 (1996-12-01), Chi et al.
patent: 5625210 (1997-04-01), Lee et al.
Hook Terence B.
Johnson Jeffrey B.
Wong Hon-Sum P.
International Business Machines - Corporation
Shkurko Eugene I.
Tran Minh Loan
Ziegler, Jr. Geza C.
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