Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-08-15
2000-08-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257239, H01L 27148, H01L 29768
Patent
active
061076554
ABSTRACT:
An image sensor having a plurality of pixels arranged in a series of row and columns comprising: a semiconductor substrate having a plurality of pixels formed in rows and columns with at least two row adjacent pixels and at least two column adjacent pixels formed within the substrate; and at least one electrical function integrated within the adjacent pixels that is shared between the adjacent pixels. The electrical function can be either a contact region or an electrical circuit used in implementing either a photogate, a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion contact, a reset drain, a lateral overflow gate, an overflow drain or an amplifier.
REFERENCES:
patent: 4636865 (1987-01-01), Imai
patent: 5237190 (1993-08-01), Wu et al.
patent: 5243180 (1993-09-01), Nam
patent: 5280186 (1994-01-01), Lee
patent: 5338948 (1994-08-01), Sims
patent: 5418387 (1995-05-01), Nakamura et al.
patent: 5517043 (1996-05-01), Ma et al.
patent: 5600159 (1997-02-01), Monoi et al.
patent: 5867215 (1999-02-01), Kaplan
Eiji Oba, Imaging circuits and Systems/Paper 11.1-11.5, IEEE International Solid State Circuits Conf., pp. 180-189 and 452-454.
Hon-Sum Wong, Technology and Device Scaling Considerations for CMOS Imagers, IEEE vol. 43, No. 12, Dec. 1996.
Eric R. Fossum, Active Pixel Sensors: Are CCD's Dinosaurs?, SPIE vol. 1900.
Robert Guidash, U.S. Patent Application Ser. No. 08/808,444, Active Pixel Sensor With Inter-Pixel Sharing, filed Feb. 28, 1997.
128/128 CMOS Photodiode-type Active Pixel R.H. Nixon, S.E. Kemeny, C.O. Staller and E. R. Fossum, Sensor With on-Chip Timing, Control and Signal Chain Electronics, SPIE vol. 2415 (1995).
H. Kawashima, et al. "A 1/4 Inch Format 250K Pixel Amplified MOS Image Sensor Using CMOS Process", Proceeding of the International Electro Devices Meeting, Washington, Dec. 5-8, 1993, pp. 575-578.
Eastman Kodak Company
Leimbach James D.
Ngo Ngan V.
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