Active pixel image cell with embedded memory and pixel level sig

Details Active pixel image cell with embedded memory and pixel level sig Active pixel image cell with embedded memory and pixel level sig

1997-09-03

1999-10-05

Lee, John R.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

2502081, 257431, 257222, 257225, 348308, H01L 27148, H04N 5335

Patent

active

059628448

ABSTRACT:
An active pixel image cell which includes a photosensor and an embedded memory element and may be used to produce signals corresponding to the photosensor outputs for successive frames. The structure of the active pixel cell includes an analog, non-volatile, or dynamic memory element and the control elements needed to store the output of the photosensor generated during a previous frame. The pixel elements then generate a signal representing the current frame output of the photosensor. The current frame output and previous frame output are then provided as output signals for the pixel and may be subjected to off-pixel processing as desired. For example, the two values may be subtracted from one another by an off-pixel difference amplifier to form a signal representing the difference between the image on the photodiode sensor of the pixel between successive frames. The difference signal may then be used for purposes of video compression, motion detection, or image stabilization.

REFERENCES:
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patent: 5608243 (1997-03-01), Chi et al.
patent: 5739562 (1998-04-01), Ackland et al.
A Random Access Photodiode Array for Intelligent Image Capture; Pecht et al.; IEEE Transactions on Electron Devices; vol. 38, No. 8; pp. 1772-1780; Aug. 1991.
Dickinson, A. et al., "TP 13.5: A 256.times.256 CMOS Active Pixel Image Sensor with Motion Detection," IEEE Internal Solid-State Circuits Conference, (1995) pp. 226-227; Slide Supplement pp. 180-181; pp. 350-351, Feb./1995.

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