Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-23
2005-08-23
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S113000, C257S184000, C257S228000, C438S024000, C438S046000, C438S069000, C438S082000, C438S099000
Reexamination Certificate
active
06933529
ABSTRACT:
An active matrix type organic light emitting diode device and a thin film transistor thereof are disclosed in the present invention. The driving thin film transistor for an active matrix type organic light emitting diode (AMOLED) device having first and second electrodes spaced apart from each other and an organic light emitting layer disposed between the first and second electrodes includes a gate electrode on a substrate, a semiconductor layer over the gate electrode, and source and drain electrodes on the semiconductor layer, wherein the source and drain electrodes are spaced apart from each other and respectively overlap portions of the gate electrode, and an overlapping area between the gate electrode and the source electrode is larger than an overlapping area between the gate electrode and the drain electrode.
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Park Jae-Yong
Yoo Juhn-Suk
Lee Hsien-Ming
LG. Philips LCD Co. Ltd.
Morgan & Lewis & Bockius, LLP
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