Active matrix type organic electroluminescent device

Details Active matrix type organic electroluminescent device Active matrix type organic electroluminescent device

2005-02-04

2008-11-25

Macchiarolo, Peter (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

C313S504000, C313S506000, C313S507000

Reexamination Certificate

active

07456568

ABSTRACT:
An active matrix type organic electroluminescent device includes a plurality of pixels disposed on a substrate. A pixel includes a driving area and a light-emitting area. The light-emitting area comprises a gate insulating layer formed over a substrate, an interlayer insulating layer formed on the gate insulating layer, a first pixel electrode disposed over the interlayer insulating layer and coupled to a driving thin film transistor, a passivation layer interposed between the interlayer insulating layer and the first pixel electrode, a second pixel electrode disposed over the first pixel electrode, and a light-emitting layer interposed between the first pixel electrode and the second pixel electrode. The substrate, the gate insulating layer, the interlayer insulating layer, the first pixel electrode, and the passivation layer each have a refractive index of 1.4 to 1.6.

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Thyagaraja et al., Silicon Oxynitride Depositions by LPCVD, Nov. 5, 2002. Presentation, Georgia Tech Microelectronics Research Center.
Chinese Office Action dated May 9, 2008.

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