Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-01-02
2007-01-02
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S258000, C257S291000, C349S113000
Reexamination Certificate
active
10673243
ABSTRACT:
The invention provides an active matrix type electro-optical device and an electronic apparatus using the same capable of preventing interference of light due to contact holes and interference of reflecting light from light-reflecting film. In a thin film transistor (TFT) array substrate of a reflective active matrix type electro-optical device, a light-reflecting film can be formed in a contact hole, but positions of the contact holes for electrically connecting a pixel electrode to a drain electrode, and irregular pattern for scattering light formed on the surface of the reflection film by a lower side irregularity-formation film are different in each of pixels formed in a matrix.
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Fujita Shin
Nimura Toru
Seiko Epson Corporation
Tran Minhloan
Tran Tan
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