Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-01-17
2006-01-17
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S633000
Reexamination Certificate
active
06987284
ABSTRACT:
A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provided on the first substrate via an adhesion layer, and having projections and depressions on a surface thereof opposing to the first substrate, the projections and depressions having rounded tips and bottoms; active elements provided on the thin glass layer, each active element corresponding to a pixel; a display provided above the thin glass layer, and driven by the active elements to display an image pixel by pixel; and a second substrate provided on the display, and having an opposing electrode formed thereon.
REFERENCES:
patent: 6309901 (2001-10-01), Tahon et al.
T. Hioki, et al., IDW PROCEEDINGS, pp. 319-322, “A Flexible 8.4-In. Color Low-Temperature Poly-Si TFT-LCD”, Dec. 4, 2002.
Akiyama Masahiko
Hara Yujiro
Hioki Tsuyoshi
Nakajima Mitsuo
Onozuka Yutaka
Kabushiki Kaisha Toshiba
Nelms David
Nguyen Thinh T
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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