Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-01-02
2007-01-02
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S071000, C257S072000
Reexamination Certificate
active
10321167
ABSTRACT:
A thin-film transistor substrate, including a substrate with an insulating surface, gate electrodes, lower electrodes of capacitors made of the same material layer as the gate electrodes, a first insulating layer, a channel layer of high resistivity semiconductor having a concave part, and a pair of low resistivity source/drain electrodes. There is also a second insulating layer formed on the first insulating layer. A first connection hole penetrates the second insulating layer and exposes one of each of the pair of the source/drain electrodes. A second connection hole penetrates the second insulating layer and exposes a connection region of each of the upper layers of the upper electrode above the lower layer. A pixel electrode is formed on the second insulating layer and is connected to one of the source/drain electrodes and the upper layer of the upper electrode of the capacitor via the first and second connection holes.
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Doi Seiji
Fujikawa Tetsuya
Lewis Monica
Sharp Kabushiki Kaisha
Wilczewski Mary
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