Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-04-26
2005-04-26
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000
Reexamination Certificate
active
06885030
ABSTRACT:
An active matrix substrate comprises a substrate, a thick-film adhesive pad made of organic resin, provided on the substrate and including, at least at a part of a side face thereof, an inclined region having a first contact angle smaller than 90 degrees to the main face of the substrate, a thin-film active element provided on the thick-film adhesive pad, and a thin-film interconnection line connected to the thin-film active element and extending onto the substrate via the inclined region, a film thickness of the thick-film adhesive pad being four or more times that of the thin-film interconnection line.
REFERENCES:
patent: 5339180 (1994-08-01), Katoh
patent: 5763904 (1998-06-01), Nakajima et al.
patent: 20010020994 (2001-09-01), Kaneko et al.
patent: 11-142878 (1999-05-01), None
Akiyama Masahiko
Hara Yujiro
Hioki Tsuyoshi
Nakajima Mitsuo
Onozuka Yutaka
Hoang Quoc
Kabushiki Kaisha Toshiba
Nelms David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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