Active matrix substrate, method of making the substrate, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000, C257S088000

Reexamination Certificate

active

07459723

ABSTRACT:
An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

REFERENCES:
patent: 5519521 (1996-05-01), Okimoto et al.
patent: 6545730 (2003-04-01), Hwang
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patent: 1997-28690 (1997-06-01), None
patent: 2000-0021351 (2000-04-01), None
patent: 2000-31390 (2000-06-01), None
patent: 2000-38544 (2000-07-01), None
Kim, et al., “Novel Four-Mask-Count Process Architecture for TFT-LCDs”, SID 00 Digest, pp. 1006-1009 (2000).

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