Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-24
2006-10-24
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07126157
ABSTRACT:
An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
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Copy of Korean Office Action dated Nov. 1, 2003.
Partial English translation of Korean Office Action dated Nov. 1, 2003.
Kim, et al., “Novel Four-Mask-Count Process Architecture for TFT-LCDs,” SID 00 DIGEST, pp. 1006-1009 (2000).
Copy of Korean Office Action issued on Jul. 30, 2004.
Ban Atsushi
Ohgami Hiroyuki
Okada Yoshihiro
Okamoto Masaya
Saito Yuichi
Conlin David G.
Edwards Angell Palmer & & Dodge LLP
Sharp Kabushiki Kaisha
Tran Thien F.
Tucker David A.
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