Active matrix substrate for a liquid crystal display and...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S030000, C438S048000, C438S049000, C438S054000, C438S128000, C438S149000, C438S151000, C438S157000, C438S166000, C438S283000

Reexamination Certificate

active

06927087

ABSTRACT:
An active matrix substrate for a liquid crystal display and method of forming the same. To form the active matrix substrate five masks are needed. The first mask forms gate lines on the transparent substrate. The second mask patterns a stacked layer of a metal layer/an n-doped layer/a semiconductor layer formed on a gate insulating layer to form data lines. After forming a low k dielectric layer, the third mask forms openings therein. The forth mask patterns pixel electrodes and conducting lines with source pattern on the low k dielectric layer and further patterns the metal layer and the n-doped layer. After depositing a passivating layer the fifth mask defines the passivating layer.

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