Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-10
2005-05-10
Kim, Robert H. (Department: 2871)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C250S267000, C250S265000, C349S199000, C349S158000
Reexamination Certificate
active
06891194
ABSTRACT:
An electromagnetic detector includes an insulating substrate, whereon a charge storage capacitor, a charge collection electrode connected to the charge storage capacitor, and a semiconductor film having electromagnetic conductivity are laminated in this order. The charge collection electrode has an uneven section composed of at least a concave or convex part, dedicated for use in reinforcing a bonding strength between the semiconductor film and the charge collection electrode. With this structure, a peeling of the semiconductor film can be prevented.
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Kim Robert H.
Qi Mike
Sharp Kabushiki Kaisha
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