Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-12-12
2006-12-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S088000, C257S202000, C257S291000, C257S390000, C257SE27110, C257SE27121, C257SE25028, C438S157000, C438S405000, C438S417000
Reexamination Certificate
active
07148511
ABSTRACT:
An active matrix substrate includes a load circuit including a first active element performing a switching operation of a load, the first active element including a semiconductor film of a substantially polycrystalline state; a drive circuit including a second active element controlling driving the load, the second active element including a semiconductor film of a substantially single crystalline state, a hole being provided to one of a part and a peripheral part of the semiconductor film, the hole functioning a starting point for crystallizing the semiconductor film; and a substrate on a same plane of which the load circuit and the drive circuit are formed.
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patent: A 5-134272 (1993-05-01), None
“Single Crystal Thin Film Transistors, ” IBM Technical Disclosure Bulletin, pp. 257-258, Aug. 1993.
Ishihara et al., Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass, Flat Panel Display Technology and Display Metrology II, Proceedings of SPIE, vol. 4295, pp. 14-23, 2001.
Mandala Jr. Victor A.
Pert Evan
Seiko Epson Corporation
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