Active matrix substrate and method of forming a contact hole in

Details Active matrix substrate and method of forming a contact hole in Active matrix substrate and method of forming a contact hole in

1997-12-03

2000-04-25

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438 30, 438608, 438724, 438743, 438744, 216 23, H01L 21302

Patent

active

060543922

ABSTRACT:
A method for forming a contact hole in an active matrix substrate, the method comprising steps of: (a) depositing an insulating film covering a first electrode provided on a substrate and the substrate; (b) forming a contact hole by patterning said insulating film by means of dry etching; and (c) forming a second electrode, and contacting the second electrode with the first electrode; wherein in the step (b) after forming a contact hole by dry etching, a surface treatment by plasma etching or reactive ion etching with oxygen gas under a condition in which a pressure P is in a range of 100 Pa to 400 Pa is performed.

REFERENCES:
patent: 5336905 (1994-08-01), Bosman et al.
patent: 5431773 (1995-07-01), Ikeda et al.
patent: 5703436 (1997-12-01), Forrest et al.

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