Active matrix substrate and manufacturing method thereof

Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...

Reexamination Certificate

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C349S043000, C349S047000, C438S151000

Reexamination Certificate

active

06859252

ABSTRACT:
An active matrix substrate includes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode and a drain electrode, which are sequentially deposited on an insulating substrate. A transparent conductive layer is deposited on the source and drain electrodes so that the transparent conductive layer includes a portion deposited to be substantially the same pattern as those of the source and drain electrodes. The transparent conductive layer is connected to either the source electrode or the drain electrode to form a pixel electrode. A gate line is further included on which the gate insulating film is deposited. The gate line is to be connected to the gate electrode.

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patent: 5777702 (1998-07-01), Wakagi et al.
patent: 6222600 (2001-04-01), Hirano
patent: 61-161764 (1986-07-01), None
patent: 61-188967 (1986-08-01), None
patent: 2873119 (1991-10-01), None
patent: 05-113580 (1993-05-01), None
patent: 08-201849 (1996-08-01), None

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