Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-05-10
2005-05-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S435000, C349S042000, C349S110000, C438S155000
Reexamination Certificate
active
06891196
ABSTRACT:
An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.
REFERENCES:
patent: 5926235 (1999-07-01), Han et al.
patent: 5926242 (1999-07-01), Kataoka et al.
patent: 6088072 (2000-07-01), Lee
patent: 6211928 (2001-04-01), Oh et al.
patent: 6522369 (2003-02-01), Ohta et al.
patent: 5-203988 (1993-08-01), None
patent: 10-68971 (1998-03-01), None
patent: 94-7581 (1994-04-01), None
Korean Office Action dated Sep. 28, 2002, with English translation.
Hayase Takasuke
Ihida Satoshi
Kaneko Wakahiko
Kanou Hiroshi
Sakamoto Michiaki
Jackson Jerome
NEC LCD Technologies Ltd.
LandOfFree
Active matrix substrate and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Active matrix substrate and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active matrix substrate and manufacturing method therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3416385