Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Patent
1997-03-03
1998-10-06
Sikes, William L.
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
349139, 257 59, G02F 1136, G02F 11343, H10L 2904, H10L 31036
Patent
active
058185496
ABSTRACT:
First and second gate insulating films, a semiconductor layer made of a-Si(i), and an etching stopper layer are formed to cover a gate electrode on a glass substrate. A drain electrode side contact layer and a source electrode side contact layer are made out of a-Si(n.sup.+) in such a manner to be cut off on the etching stopper layer. A disconnection preventing a-Si(n.sup.+) wire is formed below a source wire in its longitudinal direction, and atop of which a pixel electrode is formed. Since the disconnection preventing a-Si(n.sup.+) wire and source electrode side contact layer are spaced apart, static-induced characteristics deterioration of TFT and the point and line defects during the substrate fabrication sequence can be eliminated and the non-defective ratio of the display device can be improved drastically.
REFERENCES:
patent: 5021850 (1991-06-01), Tanaka et al.
patent: 5187602 (1993-02-01), Ikeda et al.
patent: 5446562 (1995-08-01), Sato et al.
patent: 5539551 (1996-07-01), Nomoto et al.
patent: 5668650 (1997-09-01), Mori et al.
Kanemori Yuzuru
Maruyama Yuko
Sharp Kabushiki Kaisha
Sikes William L.
Ton Toan
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