Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-06-17
1998-07-07
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 54, 349 55, H01L 2904, H01L 31036
Patent
active
057773483
ABSTRACT:
An active matrix substrate has a plurality of TFT elements provided in a matrix form, a gate line block and a source line block for supplying signals to the TFT elements, and a short circuit member for short-circuiting the gate line block and the source line block. The short circuit member includes a first segment and a second segment provided parallelly to each other between the gate line block and the source line block. The first segment changes from a short-circuiting state to an insulating state with laser radiation. The second segment either changes from an insulating state to a short-circuiting state with laser radiation, or has a higher electric resistance than the first segment in the short-circuiting state. Hence, destruction of insulating films and, hence, inadequate display are prevented even after inspection.
REFERENCES:
patent: 5223961 (1993-06-01), Ukai et al.
patent: 5473452 (1995-12-01), Shin
Abraham Fetsum
Sharp Kabushiki Kaisha
Thomas Tom
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