Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-06-22
2009-06-16
Parker, Kenneth A. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07547918
ABSTRACT:
An auxiliary line including a guide layer and an auxiliary metallic member is formed with respect to a signal transmitting line or a main auxiliary capacitance line formed on a glass substrate. The guide layer is formed in the same layer where pixel electrodes are formed. The auxiliary metallic member is formed by using a method such as an inkjet method, in which fine particles of metal is ejected or dropped.
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Azumada Kyoko
Ban Atsushi
Fujita Tatsuya
Nakamura Kenji
Birch & Stewart Kolasch & Birch, LLP
Nguyen Joseph
Parker Kenneth A.
Sharp Kabushiki Kaisha
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