Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-06-12
2007-06-12
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S443000, C257S457000, C345S043000, C345S092000
Reexamination Certificate
active
11114020
ABSTRACT:
An active matrix substrate of the present invention includes a TFT and a substrate. The TFT formed on a substrate includes, when viewed in a normal direction of the substrate: a first region in which a gate electrode overlaps a source electrode via a semiconductor layer; a second region in which the gate electrode overlaps a drain electrode via the semiconductor layer; and a third region in which the semiconductor layer overlaps neither the gate electrode, source electrode, nor the drain electrode. The third region includes a portion adjoining the source electrode lying outside the first region and/or a portion adjoining the drain electrode lying outside the second region. The gate electrode includes: a main body, which includes a portion constituting the first region and the second region; and a protrusion from the main body. At least a part of the protrusion of the gate electrode is in between the drain electrode and the portion of the third region adjoining the source electrode, or between the source electrode and the portion of the third region adjoining the drain electrode.
REFERENCES:
patent: 2004/0031964 (2004-02-01), Morita et al.
patent: 4-195024 (1992-07-01), None
Enda Kenji
Hashimoto Yuhko
Itoh Ryoki
Takeuchi Masanori
Huynh Andy
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Taylor Earl N.
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