Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-04-15
1999-11-02
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 349 43, 349 45, 349 54, 349192, H01L 27088, H01L 2941
Patent
active
059775637
ABSTRACT:
In an active matrix substrate having thereon a matrix of pixels each composed of a pair of a TFT and a pixel electrode, when the shorting of the pixel electrodes in adjacent pixels occurs, an electrical connection between the pixel electrode and drain electrode in the TFT of a matching pair in either of the shorted pixel electrodes is cut. For example, when the shorting of two adjacent pixels occurs, the pixel electrodes in both the pixels are driven by the TFT in the non-cut pixel. This arrangement makes it possible to make a display defect resulted from the shorting of adjacent pixels on the active matrix substrate less noticeable, and hence to upgrade display quality.
REFERENCES:
patent: 5132819 (1992-07-01), Noriyama
patent: 5641974 (1997-06-01), den Boer et al.
patent: 5682211 (1997-10-01), Yao et al.
Kubo Masumi
Tajima Yoshimitsu
Yamashita Toshihiro
Jackson, Jr. Jerome
Sharp Kabushiki Kaisha
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