Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-11-08
1997-03-25
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 66, 257 72, 257352, 349 42, 349145, H01L 2904, H01L 31036, H01L 2701, H01L 2712
Patent
active
056147309
ABSTRACT:
There is disclosed an active matrix substrate including on a given substrate a thin film transistor, a scanning line connected to the gate of the thin film transistor, a data bus connected to the source of the thin film transistor, and a picture element electrode connected to the data bus through the thin film transistor, the active matrix substrate comprising a structure of the scanning line having the surface covered with an insulating film. A semiconductor layer covered with a gate insulating film constituting the thin film transistor, and a gate electrode constituting the thin film transistor, which are laid on each other in the stated order.
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Ishiguro Hideto
Nakazawa Takashi
Loke Steven H.
Seiko Epson Corporation
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