Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2006-02-21
2009-10-20
Lindsay, Jr., Walter L (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S099000, C438S151000, C257SE29183
Reexamination Certificate
active
07605046
ABSTRACT:
The invention relates to an active matrix structure and method for manufacturing the active matrix structure for a display device, wherein the structure includes: providing a matrix substrate with a number of row lines and a number of column lines, with each point of intersection between one of the row lines and one of the column lines being assigned a passage through the matrix substrate for generating a pixel, depositing a layer of p-silicon on the matrix substrate, for each pixel, creating an n+-doped region in the p-silicon, which n+-doped region is provided from the passage as far as a free surface of the p-silicon layer, and creating a p+-doped region within the n+-doped region such that a layer of the n+-doped region remains, and applying a layer made of a matrix material which has particles of electronic ink contained therein, or an organic light-emitting diode layer on a free surface of the final structure resulting from step c).
REFERENCES:
patent: 4918504 (1990-04-01), Kato et al.
patent: 5082793 (1992-01-01), Li
patent: 5376561 (1994-12-01), Vu et al.
patent: 6690434 (2004-02-01), Yamazaki et al.
patent: 7030412 (2006-04-01), Drzaic et al.
patent: 0838846 (1998-04-01), None
Kagan, C.R. et al.; “Thin-Film Transistors”; 2003; Marcel Dekker, Inc.; pp. 400-418.
Ng, Kwok K.; “Complete Guide To Semiconductor Devices”; 2002; John Wiley & Sons, Inc.; p. 266-281 and p. 656-659.
Muller, R.S., Kamins, T.I. et al.; “Device Electronics for Integrated Circuits”; 2003; John Wiley & Sons, Inc.; p. 278-379.
Kagan, C. R. and Andry, P.; “Thin-Film Transistors”; 2003; Marcel Dekker, Inc.; p. 188.
Baker & Botts L.L.P.
Booker Vicki B
Lindsay, Jr. Walter L
LandOfFree
Active matrix structure for a display device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Active matrix structure for a display device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active matrix structure for a display device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4087911