Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-09-18
2007-09-18
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S059000, C257S351000, C257S377000, C257S343000, C257SE29273, C257SE29314
Reexamination Certificate
active
10929561
ABSTRACT:
The series TFT comprises a semiconductor layer including a first body, a second body and a connecting portion serially connecting the first body to the second body. The first body has a first channel region and first source/drain regions positioned at both sides of the first channel region. The second body has a second channel region and second source/drain regions positioned at both sides of the second channel region. And the connecting portion is interposed between the first source/drain region and the second source/drain region to serially connect the first body to the second body and having a conductive type different from that of at least one of the first source/drain region and the second source/drain region. A first gate is positioned to correspond to the first channel region, and a second gate is positioned to correspond to the second channel region. An active matrix OLED can be manufactured using such series TFTs.
REFERENCES:
patent: 4942448 (1990-07-01), Tsukamoto et al.
patent: 5587597 (1996-12-01), Reedy et al.
patent: 2002/0134983 (2002-09-01), Yamazaki
patent: 1101167 (1995-04-01), None
H.C. Park & Associates PLC
Jackson Jerome
Nguyen Joseph
Samsung SDI & Co., Ltd.
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