Active matrix liquid crystal display device

Details Active matrix liquid crystal display device Active matrix liquid crystal display device

1994-04-25

1995-05-09

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 71, 257382, 359 59, G02F 113, H01L 2904

Patent

active

054142784

ABSTRACT:
A pixel electrode and a line for a storage capacitor are sandwiched by first and second protecting films so as to position them in a different plane from a gate electrode and source/drain lines. An insulating film for a storage capacitor and the second protecting film remain at a crossing of the source line and a gate line, but part of them on a TFT is removed, when a pattern of the removal is at least partially deviated from a pattern of a contact hole in the first protecting film directly covering a polycrystalline Si film over the TFT, so that a short-circuit between lines and a breaking of the lines because of a level difference of film layers. Thus, an occurance of failure because of the short-circuit between lines is inhibited, and failure in the lines is reduced by reducing the breaking of the source line and/or the drain line.

REFERENCES:
patent: 5056895 (1991-10-01), Kahn
patent: 5132819 (1992-07-01), Noriyama et al.
patent: 5153702 (1992-10-01), Aoyama et al.
patent: 5173792 (1992-12-01), Matsueda
patent: 5182661 (1993-01-01), Ikeda et al.

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