Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Patent
1997-01-14
1999-03-09
Gross, Anita Pellman
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
349 38, 349 43, 438 30, G02F 11343, G02F 1136
Patent
active
058807942
ABSTRACT:
A method for manufacturing an AMLCD with TFTs comprises the steps of: depositing a metal layer on a glass substrate; forming gate bus line pads, gate bus lines, gate electrodes, and storage capacitance electrodes by patterning the metal layer; forming a first anodized layer on the gate bus line pads, gate bus lines, gate electrodes, and storage capacitor electrodes; and forming a second anodized layer on the first anodized layer except portions thereof overlying the gate bus line pads and the storage capacitance electrode. Accordingly, hillocks, resulting from overetching of the metal layer by a photoresist developer can be prevented, and the capacitance of the storage capacitance electrode is increased. Also, the second anodized layer improves electrical isolation between conductive components of the LCD.
REFERENCES:
patent: 5402254 (1995-03-01), Sasano et al.
Gross Anita Pellman
LG Electronics Inc.
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