Active matrix display screen using hydrogenated amorphous silico

Details Active matrix display screen using hydrogenated amorphous silico Active matrix display screen using hydrogenated amorphous silico

1987-07-10

1989-07-04

Miller, Stanley D.

G02F 113

Patent

active

048445878

ABSTRACT:
The semiconductor making it possible to obtain thin film transistors is of hydrogenated amorphous silicon carbide. As this material is transparent, the stack constituted by the semiconductor and the insulant can be maintained over the entire wall, so that there is no need to expose the columns and blocks.
Application to flat-faced screen displays.

REFERENCES:
patent: 4161743 (1979-07-01), Yonezawa et al.
patent: 4224636 (1980-09-01), Yonezawa et al.
patent: 4582721 (1986-04-01), Yoshino et al.
patent: 4654117 (1987-03-01), Aoki et al.

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