Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-09-19
2000-06-20
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 65, 257 64, 257 59, 257 72, 438286, 438163, H01L 2701, H01L 2904
Patent
active
060780606
ABSTRACT:
The invention provides a peripheral drive circuit integrated active matrix LCD device in which thin-film transistors have different characteristics optimized for individual circuits of the active matrix LCD device. A pixel matrix portion includes thin-film transistors, each having offset gate regions 134 and 136 produced in a non-self-alignment manner, an n-channel driver portion includes thin-film transistors, each having lightly-doped regions 128 and 130 produced in a combination of the non-self-alignment manner and a self-alignment manner, and a p-channel driver portion includes thin-film transistors produced in a self-alignment manner. This construction makes it possible to arrange the thin-film transistors having characteristics required by the individual circuits.
REFERENCES:
patent: 5323042 (1994-06-01), Matsumoto
patent: 5712495 (1998-01-01), Suzawa
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5893729 (1999-04-01), Roisten et al.
Kubo Nobuo
Shibuya Tsukasa
Yoshinouchi Atsushi
Zhang Hongyong
Duong Hung Van
Picard Leo P.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
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