Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-07-04
2006-07-04
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S066000, C257S072000, C257S073000, C257S079000, C257S081000, C257S088000, C257S099000, C257S100000, C257S777000, C257S780000, C257S781000, C257S783000, C257S786000
Reexamination Certificate
active
07071488
ABSTRACT:
The invention provides an active matrix display device in which active elements are formed on a first substrate, wiring lines are formed on a second substrate, an element chip having at least one active element is peeled off from the first substrate and is then transferred onto the second substrate, electro-optical elements are formed on a third substrate, and the second substrate adheres to the third substrate. The invention also provides a method of electrically connecting the active elements of the element chip to the wiring lines of the second substrate and of electrically connecting the active elements of the element chip to the electro-optical elements of the third substrate in a thin film transistor display device in which the active elements are thin film transistors.
REFERENCES:
patent: 5789763 (1998-08-01), Kato et al.
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6541294 (2003-04-01), Yamazaki et al.
patent: 6559916 (2003-05-01), Urabe et al.
patent: 6593591 (2003-07-01), Yudasaka et al.
patent: 6605826 (2003-08-01), Yamazaki et al.
patent: 6798132 (2004-09-01), Satake
patent: 6849877 (2005-02-01), Yamazaki et al.
patent: 6911675 (2005-06-01), Kato et al.
patent: 6992439 (2006-01-01), Yamazaki et al.
patent: 2001/0040645 (2001-11-01), Yamazaki
patent: 2002/0079493 (2002-06-01), Morishita
patent: 2002/0173085 (2002-11-01), Nakajima et al.
patent: 2003/0011738 (2003-01-01), Akiyama et al.
patent: 2003/0011870 (2003-01-01), Otake et al.
patent: 2003/0027369 (2003-02-01), Yamazaki
patent: 2003/0034497 (2003-02-01), Yamazaki et al.
patent: 2003/0092213 (2003-05-01), Yamazaki et al.
patent: 2003/0094615 (2003-05-01), Yamazaki et al.
patent: 2003/0132446 (2003-07-01), Guenther et al.
patent: 2005/0175792 (2005-08-01), Maeda et al.
patent: A 2001-282423 (2001-10-01), None
patent: A 2001-282424 (2001-10-01), None
patent: A 2002-311858 (2002-10-01), None
patent: A 2002-314052 (2002-10-01), None
patent: A 2002-314123 (2002-10-01), None
patent: A 2002-343944 (2002-11-01), None
patent: A 2002-368282 (2002-12-01), None
patent: A 2003-77940 (2003-03-01), None
patent: A 2003-133708 (2003-05-01), None
patent: A 2003-258210 (2003-09-01), None
Shimoda et al., “Surface Free Technology by Laser Annealing (SUFTLA)”IEEE,1999, pp. 289-292.
Utsunomiya et al., Low Temperature Poly-Si TFTs on Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing (SUFTLA™),SID 00 Digest,2000, pp. 916-919.
Shimoda, “Future Trend of TFTs”,Asia Display/IDW '01 ,pp. 327-330.
Utsunomiya et al., “Low Temperature Poly-Si TFT-LCD Transferred onto Plastic Substrate Using Surface Free Technology by Laser Ablation/Annealing (SUFTLA®)”,Asia Display/IDW '01, pp. 339-342.
Oliff & Berridg,e PLC
Seiko Epson Corporation
Soward Ida M.
LandOfFree
Active matrix display device and thin film transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Active matrix display device and thin film transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active matrix display device and thin film transistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3571530