Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2005-06-28
2005-06-28
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S087000, C257S088000, C257S097000, C257S100000, C257S431000, C257S443000, C349S144000, C349S120000, C349S150000, C438S028000
Reexamination Certificate
active
06911675
ABSTRACT:
A semiconductor device reduced in size is provided in which the surface area outside of a display portion required for IC chips to mounted is reduced in a semiconductor device having an active matrix display portion. Further, signal wiring connection defects that accompany IC chip mounting are reduced. By manufacturing TFTs on an opposing substrate in a reflecting active matrix semiconductor device, thus manufacturing a desired logic circuit, the logic circuit, conventionally mounted externally, is formed on the opposing substrate. Further, the semiconductor device is made high speed and high performance by using suitable TFT structures and electric power source voltages for pixels and driver circuits on a pixel substrate and for the logic circuit on the opposing substrate.
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Kato Kiyoshi
Mutaguchi Kohei
Ozaki Tadafumi
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Matthew
Yevsikov Victor V
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